Highly efficient spin-orbit torque generation in bilayer WTe 2 / Fe 3 GaTe 2 heterostructure

被引:1
|
作者
Marfoua, Brahim [1 ]
Hong, Jisang [1 ]
机构
[1] Pukyong Natl Univ, Dept Phys, Busan 48513, South Korea
基金
新加坡国家研究基金会;
关键词
2D WTe 2 /Fe 3 GaTe 2 heterostructure; Spin Hall angle; Critical current density; Switching power consumption; Spin-orbit torque; FERROMAGNETISM; CRYSTAL; DRIVEN; FIELD;
D O I
10.1016/j.mtphys.2024.101378
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spin-orbit torque (SOT) phenomenon is crucial for advancing spintronics. Therefore, we explore the SOT efficiency in the WTe 2 /Fe 3 GaTe 2 heterostructure. The WTe 2 /Fe 3 GaTe 2 heterostructure has a ferromagnetic ground state with a perpendicular magnetic anisotropy. Through the Metropolis Monte Carlo simulations, we find that the WTe 2 /Fe 3 GaTe 2 heterostructure has a Curie temperature of 345 K. We also calculate the temperature-dependent coercive field H C (T) via the extended Landau-Lifshitz-Gilbert (LLG) equation, and the estimated coercive field is 0.32 T at 300 K. From the electrical and spin Hall conductivity of the WTe 2 layer, we obtain a giant spin Hall angle of -4 is obtained at a low chemical potential. Besides, the WTe 2 /Fe 3 GaTe 2 heterostructure exhibits a critical current density of -7.40 x 10 4 A/cm 2 at 300 K. This value is superior to that found in most previously reported materials. Finally, we achieve the switching power consumption of approximately 1.80 x 10 15 W/m 3 at 300 K, and this is comparable to or even lower than the values found in other bulk type or thick thickness SOT materials. Due to this highly efficient SOT performance, the ultrathin WTe 2 / Fe 3 GaTe 2 heterostructure may offer a promising avenue for advanced room temperature spintronic applications with implications for both fundamental research and technological advancements.
引用
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页数:10
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