GaN-based wide-band high-efficiency power amplifier with multi harmonic resonance

This paper introduces a novel multi -harmonic resonance approach in designing a single -ended parallel -circuit class - E/F3 power amplifier (PA). At its core, this innovative design integrates a novel reactance compensation technique with multi -harmonic tuning at the load, to achieve unprecedented wideband characteristics and elevated efficiency. The approach is further distinguished by the strategic incorporation of two distinct LC shunt resonators, each finely tuned to either the second or third harmonic. This unique configuration ensures precise impedance mapping to the optimal values for the device, a critical factor in enhancing PA performance. A key innovation lies in the meticulous attention to third harmonic terminations, which significantly boosts the power -added efficiency, a crucial metric in PA functionality. The design approach is validated using a PCB -based GaN PA from 500-1500 MHz. The measurement results show that the designed class E/F3 PA has a saturated output power of more than 10 W, power added efficiency of 80.5%, and a power gain of 15.2 dB at an operating frequency of 1000 MHz.