Radiation tolerance analysis of 4H-SiC PIN diode detectors for neutron irradiation

被引：0
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作者：
Gao, R.L. [1 ]
Du, X. [2 ]
Ma, W.Y. [3 ]
Sun, B. [3 ]
Ruan, J.L. [3 ]
Ouyang, X. [4 ]
Li, H. [3 ]
Chen, L. [3 ]
Liu, L.Y. [3 ]
Ouyang, X.P. [1 ,3 ]
机构：
[1] School of Nuclear Science and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an,710049, China
[2] Department of Engineering Physics, Tsinghua University, Beijing,100084, China
[3] State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an,710024, China
[4] Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing,100875, China
来源：
Sensors and Actuators A: Physical | 2022年 / 333卷
基金：
中国国家自然科学基金;
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