High-temperature non-volatile memory technology

被引：0
|
作者：
Suga, Hiroshi [1 ]
机构：
[1] Chiba Inst Technol, Fac Engn, Chiba, Japan
来源：
NATURE ELECTRONICS | 2024年 / 7卷 / 05期
关键词：
12;
D O I：
10.1038/s41928-024-01172-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Non-volatile memory devices capable of recording and reading information at temperatures up to 600 degrees C can be built using aluminium scandium nitride ferroelectric diodes.
引用
收藏
页码：330 / 331
页数：2
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