A Planar Heterojunction Perovskite Solar Cell Based on Graphene Oxide Hole Transport Layer

被引：0
|
作者：
Suo X. [1 ]
Liu Y. [1 ]
Zhang L. [1 ]
Su H. [1 ]
Li W. [1 ]
Li G. [1 ]
机构：
[1] Key Laboratory of Photovolatic Materials, Ningxia University, Yinchuan
来源：
| 1600年 / Cailiao Daobaoshe/ Materials Review卷 / 35期
基金：
中国国家自然科学基金;
关键词：
GO; Grain growth; Hole transport layer; Perovskite solar cell;
D O I：
10.11896/cldb.20010007
中图分类号：
学科分类号：
摘要：
Spiro-OMeTAD is expensive, unfriendly to environment and difficult to be fabricated as it is used as a traditional hole transport material in perovskite solar cells. In this paper, GO is utilized as a replacement of Spiro-OMeTAD. The influence of concentration of the GO dispersed solution on the photoelectric performance of the device was investigated. Primarily, different film thickness is obtained by varying the concentration of the dispersed solution. It was found that GO substrates evidently influence on the perovskite grain size. Furthermore, a planar device was fabricated with a structure of ITO/GO/CH3NH3PbI3/PCBM/Ag. The effect of GO substrate on perovskite solar cell was analyzed by characterizing the photoelectric properties of the devices with different GO substrates. It illustrates that the grain size of perovskite crystal is up to 900 nm if the GO film is fabricated by a dispersion concentration of 0.25 mg/mL. In addition, the peak of PL for the perovskite thin film on the GO substrate is 2 000, and the charge transfer efficiency reaches to 52.8%. GO-based perovskite solar cell is finally optimized, and its photoelectric conversion efficiency (PCE) can be up to 8.69%. © 2021, Materials Review Magazine. All right reserved.
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页码：6015 / 6019
页数：4
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