Application of Cerium Oxide Nanopowders for Silicon Polishing

被引：0

作者：

Chkhalo, N. I. ^{[1
]}

Akhsakhalyan, A. A. ^{[1
]}

Vainer, Yu. A. ^{[1
]}

Zorina, M. V. ^{[1
]}

Pestov, A. E. ^{[1
]}

Svechnikov, M. V. ^{[1
]}

Toropov, M. N. ^{[1
]}

Kumar, N. ^{[1
]}

Tokunov, Yu. M. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 607680, Russia

[2] MIPT, Dolgoprudnyi 141701, Moscow Oblast, Russia

来源：

TECHNICAL PHYSICS | 2024年 / 69卷 / 04期

关键词：

surface; roughness; X-ray optics; deep grinding-polishing; X-RAY-SCATTERING; SURFACES;

D O I：

10.1134/S106378422403006X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The research methods and the first results obtained in the study of the roughness of single-crystal silicon (111) substrates processed at the final stage by various methods are described: traditional polishing without the use of chemical-mechanical polishing (CMP), with the use of CMP and without CMP, but with the use of oxide cerium nanopowders. The efficiency of using CeO2 nanopowders has been demonstrated. The following effective roughness values were obtained: without CMP-3.56 nm, with CMP-0.54 nm, and without CMP, but with CeO2 polishing-0.93 nm.

引用

页码：824 / 832

页数：9

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