Graphdiyne particles as nano-floating gates for high-performance nonvolatile organic field-effect transistor memory

被引：1

作者：

Liu, Yuyu ^{[1
]}

Shao, Zhen ^{[2
]}

Yu, Xiang ^{[2
]}

Guo, Dong ^{[2
]}

Wang, Shasha ^{[2
]}

Bian, Linyi ^{[2
]}

Chen, Yanhuan ^{[3
]}

Liu, Huibiao ^{[3
]}

Ling, Haifeng ^{[2
]}

Xie, Linghai ^{[2
]}

机构：

[1] Nanjing Vocat Univ Ind Technol, Coll Elect Engn, Nanjing 210023, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Inst Adv Mat, State Key Lab Organ Elect & Informat Displays, Nanjing 210023, Peoples R China

[3] Inst Chem, Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Key Lab Organ Solids, Beijing 100190, Peoples R China

来源：

ORGANIC ELECTRONICS | 2024年 / 128卷

基金：

中国国家自然科学基金;

关键词：

OFET; Nonvolatile memory; Graphdiyne; Nano -floating gate; Charge trapping; GRAPHYNE; HOLE;

D O I：

10.1016/j.orgel.2024.107027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphdiyne particles (GDYP), newcomers of carbon family, were employed as nano -floating gates in organic field-effect transistor (OFET) memories. The charge -trapping layer was prepared by blending GDYP into a polystyrene (PS) matrix. The effect of GDYP doping ratio on memory performances was investigated, and the OFET memory with the optimal doping concentration of the GDYP (0.3 mg/mL) exhibits ambipolar memory behavior with a wide memory window as large as 86 V, excellent retention time over 10 4 s with a high ON/OFF current ratio of 7.5 x 10 5 . This work demonstrates that graphdiyne is a promising charge -trapping material for high-performance nonvolatile OFET memory devices.

引用

页数：7

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