Hydroiodic Acid Additive Enhanced the Performance and Stability of PbS-QDs Solar Cells via Suppressing Hydroxyl Ligand

被引:0
|
作者
Xiaokun Yang [1 ,2 ,3 ]
Ji Yang [1 ]
Jahangeer Khan [1 ]
Hui Deng [1 ,3 ]
Shengjie Yuan [1 ,3 ]
Jian Zhang [1 ]
Yong Xia [4 ]
Feng Deng [5 ]
Xue Zhou [5 ]
Farooq Umar [1 ]
Zhixin Jin [1 ,2 ]
Haisheng Song [1 ,3 ]
Chun Cheng [2 ]
Mohamed Sabry [6 ,7 ]
Jiang Tang [1 ,3 ]
机构
[1] Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
[2] Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology
[3] Shenzhen R&D Center of Huazhong University of Science and Technology
[4] School of Optical and Electronic Information, Huazhong University of Science and Technology
[5] National Center for Magnetic Resonance in Wuhan, State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences
[6] Physics Department, College of Applied Science, Umm Al-Qura University
[7] Solar Physics Lab, National Research Institute of Astronomy and
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中图分类号
TB30 [工程材料一般性问题]; TM914.4 [太阳能电池];
学科分类号
摘要
The recent emerging progress of quantum dot ink(QD-ink) has overcome the complexity of multiple-step colloidal QD(CQD) film preparation and pronouncedly promoted the device performance.However,the detrimental hydroxyl(OH)ligands induced from synthesis procedure have not been completely removed.Here,a halide ligand additive strategy was devised to optimize QD-ink process.It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface,which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances.The corresponding power conversion efficiency of this optimized device reached 10.78%.(The control device was 9.56%.) Therefore,this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands,which is also compatible with other CQD-based optoelectronic devices.
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页码:121 / 132
页数:12
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