Additive and interfacial control for efficient perovskite light-emitting diodes with reduced trap densities

被引：0
|
作者：
Shun Tian
Chen Zou
Runchen Lai
Chungen Hsu
Xuhui Cao
Shiyu Xing
Baodan Zhao
Dawei Di
机构：
[1] State Key Laboratory of Modern Optical Instrumentation
[2] College of Optical Science and Engineering
[3] International Research Center for Advanced Photonics
[4] Zhejiang
来源：
Journal of Semiconductors | 2022年 / 43卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TN312.8 []; TB34 [功能材料];
学科分类号：
0803 ; 080501 ;
摘要：
<正>Metal halide perovskite semiconductors show excellent optoelectronic properties including tunable bandgaps[1, 2], narrow emission bandwidths[3] and high luminescence quantum efficiencies[4], making them an ideal candidate for light-emitting diode(LED) applications. Perovskite LEDs(PeLEDs) have attracted considerable attention since the initial report of room-temperature electroluminescence(EL) from halide perovskites in 2014[5].
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页码：36 / 48
页数：13
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