Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector

被引：0
|
作者：
左致远 [1 ,2 ]
夏伟 [2 ,3 ]
王钢 [1 ]
徐现刚 [2 ,3 ]
机构：
[1] School of Physics and Engineering, Sun Yat-Sen University
[2] INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co, Ltd
[3] State Key Laboratory of Crystal Material, Shandong
来源：
Journal of Semiconductors | 2015年 / 36卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
We demonstrate and introduce here a pyramidally patterned metal reflector into wafer-bonding AlGaInP light emitting diodes(LEDs) to improve the light extraction efficiency by using a photo-assisted chemical etched GaP:Mg layer. The pyramid patterns were fabricated employing a HF and H2O2 mixed solution in combination with a 532 nm laser on a GaP:Mg surface firstly, and then a gold reflector layer was evaporated onto the patterned GaP:Mg surface. After the whole chip process, the patterned gold reflector structure was confirmed to be efficient for light extraction and a 18.55% enhancement of the electroluminescent flux has been obtained by an integrating sphere, compared to the surface textured LEDs with flat reflectors.
引用
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页码：110 / 114
页数：5
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