Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

被引：0

作者：

张金

刘玉岭

闫辰奇

何彦刚

高宝红

机构：

[1] Tianjin Key Laboratory of Electronic Materials and Devices

[2] School of Electronic and Information Engineering

[3] Hebei University of

来源：

Journal of Semiconductors | 2016年 / 37卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TN305.2 [表面处理];

学科分类号：

摘要：

The replacement metal gate(RMG) defectivity performance control is very challenging in high-k metal gate(HKMG) chemical mechanical polishing(CMP). In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.

引用

页码：124 / 128

页数：5

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