A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors

被引：0

作者：

叶禹 ^{[1
,2
]}

田彤 ^{[3
]}

机构：

[1] Key Laboratory of Terahertz Solid-State Technology,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

[3] Internet of Things System Technology Laboratory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of

来源：

Journal of Semiconductors | 2013年 / 34卷 / 07期

关键词：

D O I：

暂无

中图分类号：

TN752 [振荡器];

学科分类号：

摘要：

<正>A 50 GHz cross-coupled voltage controlled oscillator(VCO) considering the coupling effect of inductors based on a 65 nm standard complementary metal oxide semiconductor(CMOS) technology is reported.A pair of inductors has been fabricated,measured and analyzed to characterize the coupling effects of adjacent inductors. The results are then implemented to accurately evaluate the VCO's LC tank.By optimizing the tank voltage swing and the buffer's operation region,the VCO achieves a maximum efficiency of 11.4%by generating an average output power of 2.5 dBm while only consuming 19.7 mW(including buffers).The VCO exhibits a phase noise of—87 dBc/Hz at 1 MHz offset,leading to a figure of merit(FoM) of-167.5 dB/Hz and a tuning range of 3.8%(from 48.98 to 50.88 GHz).

引用

页码：123 / 127

页数：5

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