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METAL-INSULATOR-SEMICONDUCTOR INVERSION LAYER SOLAR-CELLS BY USING RAPID THERMAL-PROCESSING
被引:9
|作者:
BEYER, A
EBEST, G
REICH, R
机构:
[1] TU Chemnitz, Fakultät Elektrotechnik / Informationstechnik
关键词:
D O I:
10.1063/1.115207
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The possibility of producing solar cells using rapid thermal processing (RTP) was reported in recent years. This process was applied with good results to pn-solar cells. In this work we used the RTP technique for the metal-insulator-semiconductor (MIS) inversion layer cells. Simultaneously with the growth of the tunneling oxide at the front side a p(+)/p ''high-low'' junction forms by alloying the Al into Si at the back contact. The efficiencies reached with this process are about 15%. (C) 1995 American Institute of Physics.
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页码:697 / 699
页数:3
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