ELECTRON RELAXATION-TIME MEASUREMENTS IN GAAS/ALGAAS QUANTUM-WELLS - INTERSUBBAND ABSORPTION SATURATION BY A FREE-ELECTRON LASER

被引：23

作者：

DUBOZ, JY ^{[1
]}

COSTARD, E ^{[1
]}

ROSENCHER, E ^{[1
]}

BOIS, P ^{[1
]}

NAGLE, J ^{[1
]}

BERSET, JM ^{[1
]}

JAROSZYNSKI, D ^{[1
]}

ORTEGA, JM ^{[1
]}

机构：

[1] CLIO,LURE,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.359125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intersubband absorption saturation in GaAs/AlGaAs quantum wells as a function of the incident power has been measured, using picosecond micropulses with a power density up to 1 GW/cm2 delivered by a free-electron laser. The absorption in a sample with a bound-to-bound transition was compared to the absorption in a sample with a bound-to-resonant transition, and it was found that the electron relaxation time in the bound-to-bound transition is about four times shorter than for the bound-to-resonant transition. © 1995 American Institute of Physics.

引用

页码：6492 / 6495

页数：4

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