ELECTRON RELAXATION-TIME MEASUREMENTS IN GAAS/ALGAAS QUANTUM-WELLS - INTERSUBBAND ABSORPTION SATURATION BY A FREE-ELECTRON LASER

被引：23

作者：

DUBOZ, JY ^{[1
]}

COSTARD, E ^{[1
]}

ROSENCHER, E ^{[1
]}

BOIS, P ^{[1
]}

NAGLE, J ^{[1
]}

BERSET, JM ^{[1
]}

JAROSZYNSKI, D ^{[1
]}

ORTEGA, JM ^{[1
]}

机构：

[1] CLIO,LURE,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.359125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intersubband absorption saturation in GaAs/AlGaAs quantum wells as a function of the incident power has been measured, using picosecond micropulses with a power density up to 1 GW/cm2 delivered by a free-electron laser. The absorption in a sample with a bound-to-bound transition was compared to the absorption in a sample with a bound-to-resonant transition, and it was found that the electron relaxation time in the bound-to-bound transition is about four times shorter than for the bound-to-resonant transition. © 1995 American Institute of Physics.

引用

页码：6492 / 6495

页数：4

共 50 条

[1] COMPLETE BLEACHING OF THE INTERSUBBAND ABSORPTION IN GAAS/ALGAAS QUANTUM-WELLS USING A FAR-INFRARED FREE-ELECTRON LASER
HELM, M
FROMHERZ, T
MURDIN, BN
PIDGEON, CR
GEERINCK, KK
HOVENYER, NJ
WENCKEBACH, WT
VANDERMEER, AFG
VANAMERSFOORT, PW
APPLIED PHYSICS LETTERS, 1993, 63 (24) : 3315 - 3317
[2] FREE-ELECTRON LASER-INDUCED BLEACHING OF THE INTERSUBBAND ABSORPTION IN SEMICONDUCTOR QUANTUM-WELLS
MURDIN, BN
HELM, M
PIDGEON, CR
GEERINCK, KK
HOVENYER, N
WENCKEBACH, WT
VANDERMEER, AFG
VANAMERSFOORT, PW
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 341 (1-3): : 178 - 180
[3] ELECTRON INTERSUBBAND RELAXATION IN DOPED QUANTUM-WELLS
SOTIRELIS, P
VONALLMEN, P
HESS, K
PHYSICAL REVIEW B, 1993, 47 (19): : 12744 - 12753
[4] EXCITE-PROBE DETERMINATION OF THE INTERSUBBAND LIFETIME IN WIDE GAAS/ALGAAS QUANTUM-WELLS USING A FAR-INFRARED FREE-ELECTRON LASER
MURDIN, BN
KNIPPELS, GMH
VANDERMEER, AFG
PIDGEON, CR
LANGERAK, CJGM
HELM, M
HEISS, W
UNTERRAINER, K
GORNIK, E
GEERINCK, KK
HOVENIER, NJ
WENCKEBACH, WT
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (08) : 1554 - 1557
[5] ELECTRON-CAPTURE TIME MEASUREMENTS IN GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS - PHOTORESPONSE SATURATION BY A FREE-ELECTRON LASER
DUBOZ, JY
COSTARD, E
NAGLE, J
BERSET, JM
ORTEGA, JM
GERARD, JM
JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1224 - 1229
[6] ELECTRON INTERSUBBAND NORMAL INCIDENCE ABSORPTION IN INGAAS/GAAS QUANTUM-WELLS
LI, HS
KARUNASIRI, RPG
CHEN, YW
WANG, KL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 922 - 925
[7] Saturation absorption studies of intersubband relaxation rates in a p-GaAs/AlGaAs QW using a free electron laser
Cole, BE
Langerak, CJGM
Murdin, BN
Bezant, CD
Chamberlain, JM
Pidgeon, CR
Henini, M
Nakov, V
PHYSICA E, 1998, 2 (1-4): : 181 - 185
[8] Time resolved studies of intersubband relaxation in GaAs/AlGaAs quantum wells below the optical phonon energy using a free electron laser
Murdin, BN
Langerak, CJGM
Helm, M
Kruck, P
Heiss, W
Rosskopf, V
Strasser, G
Gornik, E
Dur, M
Goodnick, SM
Lee, SC
Galbraith, I
Pidgeon, CR
SUPERLATTICES AND MICROSTRUCTURES, 1996, 19 (01) : 17 - 24
[9] FEMTOSECOND INTERSUBBAND RELAXATION IN GAAS QUANTUM-WELLS
HUNSCHE, S
LEO, K
KURZ, H
KOHLER, K
PHYSICAL REVIEW B, 1994, 50 (08): : 5791 - 5794
[10] Effect of free electron-hole pairs on the saturation of excitonic absorption in GaAs/AlGaAs quantum wells
K. L. Litvinenko
V. G. Lysenko
I. M. Hvam
Physics of the Solid State, 1998, 40 : 1032 - 1034

← 1 2 3 4 5 →