EFFICIENT DIFFRACTION-LIMITED BEAM COMBINING OF SEMICONDUCTOR-LASER DIODE-ARRAYS USING PHOTOREFRACTIVE BATIO3

被引：18
|
作者：
VERDIELL, JM
RAJBENBACH, H
HUIGNARD, JP
机构：
[1] Laboratoire Central de Recherches, Thomson-CSF
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 08期
关键词：
D O I：
10.1109/68.58051
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report beam combining of 820 nm wavelength laser diodes using two-wave mixing in BaTiO3. Energy transfer efficiencies up to 80% are obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays is demonstrated. Nearly 100 mW power in a diffraction-limited beam is obtained on the combined beam. Crystal response time of the order of a few seconds is measured. © 1990 IEEE
引用
收藏
页码：568 / 570
页数：3
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