HYDROGEN PASSIVATION OF HIGH-DOSE SILICON IMPLANT INDUCED DISLOCATIONS

被引：0
|
作者：
CHEN, DL [1 ]
GUZMAN, AM [1 ]
GREVE, DW [1 ]
机构：
[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C125 / C125
页数：1
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