共 50 条
- [41] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLDJOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 314 - &BULLIS, WMSTRIETER, FJ
- [42] ELASTIC MODULI OF HEAVILY DOPED N-TYPE GERMANIUM AT 300-550 DEGREES KSOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (05): : 1226 - +BEILIN, VMVEKILOV, YKKADYSHEV.AEKRASILNI.OM
- [44] DEVIATION FROM OHMS LAW IN HEAVILY DOPED N-TYPE GERMANIUM AT LIQUID HELIUM TEMPERATURESSOLID STATE COMMUNICATIONS, 1969, 7 (20) : 1499 - +TSCHULENA, GRBAUER, G
- [45] THE EFFECT OF UNIAXIAL PLASTIC DEFORMATION ON THE ELECTRICAL PROPERTIES OF N-TYPE GERMANIUMSOVIET PHYSICS-SOLID STATE, 1962, 3 (12): : 2610 - 2612REGEL, ARCHUDNOVSKII, FASHULMAN, SG
- [46] INFLUENCE OF CONCENTRATION OF DONORS AND ACCEPTORS ON ELECTRICAL CONDUCTIVITY OF HEAVILY DOPED N-TYPE SILICONSOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (11): : 2580 - +PENIN, NAZHURKIN, BGVOLKOV, BA
- [47] ELECTOREFLECTANCE OF HEAVILY DOPED N-TYPE AND P-TYPE GERMANIUM NEAR DIRECT ENERGY-GAPPHYSICAL REVIEW B, 1972, 6 (02): : 521 - &LUKES, FHUMLICEK, J
- [48] CATHODOLUMINESCENCE OF HEAVILY DOPED N-TYPE INDIUM ARSENIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 853 - 856VILKOTSKII, VADOMANEVSKII, DSKAKANAKOV, RDKRASOVSKII, VVTKACHEV, VD
- [49] PLASMA OSCILLATIONS IN HEAVILY DOPED N-TYPE SILICONPROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5371): : 25 - &ARAI, T
- [50] NEGATIVE MAGNETORESISTANCE OF HEAVILY DOPED N-TYPE GAASSOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 915 - +EMELYANENKO, OVNASLEDOV, DNOVSYUK, ZS