INTERDEPENDENCE OF ELECTRICAL PROPERTIES AND DEFECT STRUCTURE IN HETEROEPITAXIAL GERMANIUM AND SILICON

被引：4
|
作者：
DUMIN, DJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1971年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.1316293
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：235 / &
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