INTERDEPENDENCE OF ELECTRICAL PROPERTIES AND DEFECT STRUCTURE IN HETEROEPITAXIAL GERMANIUM AND SILICON

被引：4
|
作者：
DUMIN, DJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1971年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.1316293
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：235 / &
相关论文
共 50 条
  • [1] Chemical and electrical properties of cavities in silicon and germanium
    Myers, SM
    Follstaedt, DM
    Petersen, GA
    Seager, CH
    Stein, HJ
    Wampler, WR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 379 - 385
  • [2] ELECTRICAL PROPERTIES OF GERMANIUM-SILICON ALLOYS
    LEVITAS, A
    PHYSICAL REVIEW, 1955, 99 (06): : 1810 - 1814
  • [3] Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires
    Wu, Xueyan
    Kulkarni, Jaideep S.
    Collins, Gillian
    Petkov, Nikolay
    Almecija, Dorothee
    Boland, John J.
    Erts, Donats
    Holmes, Justin D.
    CHEMISTRY OF MATERIALS, 2008, 20 (19) : 5954 - 5967
  • [4] SOME ELECTRICAL PROPERTIES OF SILICON AND GERMANIUM ON A PSEUDOPOTENTIAL APPROACH
    JOGI, S
    BEHARI, J
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (07): : L134 - L136
  • [5] SOME ELECTRICAL PROPERTIES OF GERMANIUM AND SILICON FILAMENT DIODES
    PAVLINOV, AB
    SABLIKOV, VA
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1965, 10 (10): : 1613 - &
  • [6] EFFECT OF RAPID EARLY GROWTH ON PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON
    CULLEN, GW
    CORBOY, JF
    SMITH, RT
    JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 274 - 283
  • [7] ELECTRICAL PROPERTIES AND STRUCTURE OF BORON IMPLANTED GERMANIUM
    GUSEV, VM
    GUSEVA, MI
    IONOVA, ES
    MANSUROVA, AN
    STARININ, CV
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 21 (02): : 413 - 418
  • [8] Oxygen defect processes in silicon and silicon germanium
    Chroneos, A.
    Sgourou, E. N.
    Londos, C. A.
    Schwingenschloegl, U.
    APPLIED PHYSICS REVIEWS, 2015, 2 (02):
  • [9] THE INFLUENCE OF DEFORMATION ON THE ELECTRICAL PROPERTIES OF P-GERMANIUM AND SILICON
    PIKUS, GE
    BIR, GL
    SOVIET PHYSICS-SOLID STATE, 1960, 1 (12): : 1675 - 1686
  • [10] SOME ELECTRICAL PROPERTIES OF SEVERAL SILICON-GERMANIUM ALLOYS
    DAVIS, L
    DEMARS, GA
    RUBIN, LG
    STRAUB, WD
    PHYSICAL REVIEW, 1954, 95 (02): : 597 - 597
12345