共 50 条
- [31] ANISOTROPIC BENDING DURING EPITAXIAL-GROWTH OF III-V MIXED-CRYSTALS ON GAAS SUBSTRATE ACTA CRYSTALLOGRAPHICA SECTION A, 1972, 28 : S144 - S144
- [33] III-V epitaxial growth for nitride devices PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 201 - +
- [34] III-V epitaxial growth for nitride devices GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 113 - +
- [35] DECOMPOSITION OF ASH3 AND PH3 IN THE EPITAXIAL-GROWTH OF III-V COMPOUNDS GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 595 - 600
- [37] Ellipsometry for III-V epitaxial growth diagnostics Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1995, 13 (3 pt 1):
- [40] GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTAL EPITAXIAL COGA ON MBE GROWN III-V SEMICONDUCTORS ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 613 - 618