GOLD CONCENTRATION PROFILES AND MINORITY CARRIER LIFETIMES IN NPN STRUCTURES

被引：0
|
作者：
ZELM, M
GAIER, CE
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C261 / &
相关论文
共 50 条
  • [41] Accurate Extraction of Minority Carrier Lifetimes-Part I: Transient Methods
    Stampfer, Paul
    Stampfer, Bernhard
    Grasser, Tibor
    Waltl, Michael
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (08) : 4320 - 4325
  • [42] Minority Carrier Lifetimes in InSb/InAsSb Quantum Dot and InAsSb nBn Photodetectors
    Hoeglund, Linda
    Ting, David Z. -Y.
    Soibel, Alexander
    Hill, Cory J.
    Fisher, Anita M.
    Keo, Sam A.
    Gunapala, Sarath D.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (23) : 2492 - 2495
  • [43] Determination of minority carrier lifetimes in CuInSe2 solar cell absorbers
    Puech, K
    Zott, S
    Leo, K
    Ruckh, M
    Schock, HW
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 857 - 860
  • [44] The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC
    Zhang, Ruijun
    Hong, Rongdun
    Cai, Jiafa
    Chen, Xiaping
    Lin, Dingqu
    Zhang, Mingkun
    Wu, Shaoxiong
    Zhang, Yuning
    Han, Jingrui
    Wu, Zhengyun
    Zhang, Feng
    2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 281 - 284
  • [45] DEPENDENCE OF MINORITY-CARRIER BULK GENERATION IN SILICON MOS STRUCTURES ON HCL CONCENTRATION IN AN OXIDIZING AMBIENT
    ESQUEDA, PD
    DAS, MB
    SOLID-STATE ELECTRONICS, 1980, 23 (07) : 741 - 746
  • [46] MAJORITY-CARRIER AND MINORITY-CARRIER LIFETIME IN MOS STRUCTURES
    BACCARANI, G
    BAFFONI, CA
    RUDAN, M
    SPADINI, G
    SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1115 - 1122
  • [47] The Impact of Minority Carrier Lifetime and Carrier Concentration on the Efficiency of CIGS Solar Cell
    Fathil, M. F. M.
    Arshad, M. K. Md
    Hashim, U.
    Ruslinda, A. R.
    Ayub, R. M.
    Azman, A. H.
    Nurfaiz, M.
    Kamarudin, M. Z. M.
    Aminuddin, M.
    Munir, A. R.
    2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2014, : 24 - 27
  • [48] CARRIER LIFETIMES IN N-TYPE GOLD-DOPED GERMANIUM
    WILLIAMS, RL
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 261 - 267
  • [49] COMPUTER-CONTROLLED SPREADING RESISTANCE SYSTEM FOR MEASUREMENT OF CARRIER CONCENTRATION PROFILES OF SILICON STRUCTURES
    CSABAY, O
    JAMRICH, M
    FRANK, H
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1993, 43 (07) : 723 - 731
  • [50] Controllable Design of Minority Carrier Diffusion in npn Devices for Enhancing Er3+-Related Electroluminescence
    Wang, Yuan
    Hu, Jie
    Pang, Houwei
    Wu, Yunfeng
    Yang, Deren
    Li, Dongsheng
    ACS PHOTONICS, 2024, 11 (04) : 1524 - 1532
12345