ANNEALING STUDY OF DEFECTS IN ALPHA-IRRADIATED N-TYPE GAAS BY POSITRON-ANNIHILATION TECHNIQUE

被引：0
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作者：
GUPTA, AS
NAIDU, SV
SEN, P
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 40卷 / 02期
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T [工业技术];
学科分类号：
08 ;
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页码：95 / 99
页数：5
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