LOW-NOISE MICROWAVE GAAS FIELD-EFFECT TRANSISTOR

被引：0

作者：

BAUDET, P ^{[1
]}

BINET, M ^{[1
]}

BOCCONGIBOD, D ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

PHILIPS TECHNICAL REVIEW | 1980年 / 39卷 / 10期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A GaAs MESFET with a gate length of 0. 5 mu m was developed. The correct geometry has been obtained by self-alignment of the source and drain contacts. The microwave performance is excellent: a minimum noise figure of 1. 9 db at 12 GHz and an associated gain of 7. 8 db were obtained.

引用

页码：269 / 276

页数：8

共 50 条

[21] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR
HENDERSON, T
AKSUN, MI
PENG, CK
MORKOC, H
CHAO, PC
SMITH, PM
DUH, KHG
LESTER, LF
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 649 - 651
[22] Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor
Kardynal, BE
Shields, AJ
Beattie, NS
Farrer, I
Cooper, K
Ritchie, DA
APPLIED PHYSICS LETTERS, 2004, 84 (03) : 419 - 421
[23] LOW-NOISE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR PREAMPLIFIERS FOR STOCHASTIC BEAM COOLING SYSTEMS
LESKOVAR, B
LO, CC
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (04) : 2259 - 2261
[24] LOW NOISE GaAs FIELD-EFFECT TRANSISTORS.
Ohkawa, Shinji
Suyama, Katsuhiko
Ishikawa, Hajime
Fujitsu Scientific and Technical Journal, 1975, 11 (01): : 151 - 173
[25] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR
SHAPIRO, JS
GIORGIO, V
PROCEEDINGS OF THE IEEE, 1969, 57 (11) : 2085 - &
[26] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR
HOOPER, WW
LEHRER, WI
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1237 - &
[27] OPTIMIZATION OF ION-IMPLANTED LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
FENG, M
EU, VK
KANBER, H
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1171 - 1176
[28] STATE-OF-THE-ART OF COMPUTER-AIDED CHARACTERIZATION OF GAAS LOW-NOISE MICROWAVE TRANSISTOR
MARTINES, G
SANNINO, M
ALTA FREQUENZA, 1988, 57 (07): : 335 - 340
[29] Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature
Fujiwara, M
Sasaki, M
Akiba, M
APPLIED PHYSICS LETTERS, 2002, 80 (10) : 1844 - 1846
[30] Investigation of heavy-ion strikes on a fin field-effect transistor-based low-noise amplifier
Rajendiran, P.
Nagarajan, K. K.
Srinivasan, R.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (12)

← 1 2 3 4 5 →