GROWTH IN ULTRAHIGH-VACUUM AND STRUCTURAL CHARACTERIZATION OF FESI2 ON SI(111)

被引：5
|
作者：
LAGOMARSINO, S
SCARINCI, F
GIANNINI, C
CASTRUCCI, P
SAVELLI, G
DERRIEN, J
CHEVRIER, J
LETHANH, V
GRIMALDI, MG
机构：
[1] CNRS,CRMC2,F-13288 MARSEILLE,FRANCE
[2] UNIV CATANIA,DIPARTMENTO FIS,I-95129 CATANIA,ITALY
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期
关键词：
SEMICONDUCTING FESI2; ELECTRONIC-STRUCTURE; BETA-FESI2; SILICIDE; FILMS;
D O I：
10.1116/1.585716
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
FeSi2 films grown in ultrahigh vacuum on Si (111) substrates by solid phase epitaxy (SPE) have been characterized by several in situ and ex situ structural techniques: reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), and Rutherford backscattering (RBS). The results on a film a few hundred angstroms thick confirm that the FeSi2 which forms in these conditions is the semiconducting-beta-phase and that an epitaxial growth takes place with the (202) and/or (220) FeSi2 planes parallel to the Si (111) planes. The lattice mismatch measurements in films as thin as 100 angstrom indicate that the films are little or no elastically strained, at least at a FeSi2 growth temperature of 600-degrees-C.
引用
收藏
页码：2433 / 2436
页数：4
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