SOFT-X-RAY EMISSION-SPECTROSCOPY (SXES) STUDY OF THE VALENCE BAND ELECTRONIC-STRUCTURE OF A AU-SI ALLOY

被引：3
|
作者：
WATABE, H
IWAMI, M
HIRAI, M
KUSAKA, M
NAKAMURA, H
机构：
[1] OKAYAMA UNIV,FAC SCI,XX88Z,OKAYAMA 700,JAPAN
[2] OSAKA ELECTROCOMMUN UNIV,NEYAGAWA,OSAKA 572,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9A期
关键词：
SOFT X-RAY EMISSION SPECTROSCOPY; AU-SI ALLOY; VALENCE BAND ELECTRONIC STRUCTURE; SI S DOS; EXPERIMENT;
D O I：
10.1143/JJAP.30.1928
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Si L2,3 valence band (VB) spectrum for the Au0.67Si0.33 alloy was first studied using the soft X-ray emission spectroscopy (SXES) technique under electron beam irradiation. A clear modification was observed in the Si L2,3 valence band spectrum for the Au-Si alloy of that for a Si Single crystal, which made it possible for us to discuss the Si s VB density of state (DOS). It is concluded that a significant amount of the Si(3s) originated electronic state is included in the upper half of the VB-DOS of the Au-Si alloy due to Au-Si bond formation.
引用
收藏
页码：1928 / 1930
页数：3
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