TE-DOPED TYPE ZNSB

被引：10
|
作者：
ABOUZEID, A
SCHNEIDER, G
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 6卷 / 02期
关键词：
D O I：
10.1002/pssa.2210060251
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K101 / +
页数：1
相关论文
共 50 条
  • [31] Photoluminescence characterization of Te-doped GaSb/AlSb superlattices
    Chinese Acad of Sciences, Shanghai, China
    Superlattices Microstruct, 1 (29-33):
  • [32] Electronic band structures of Te-doped GaN nanowires
    Ozkisi, Harun
    Ozkapi, Baris
    Ozkapi, Sena Guler
    Dalgic, Seyfettin
    MATERIALS TODAY-PROCEEDINGS, 2017, 4 (11) : 11640 - 11643
  • [33] Photoluminescence characterization of Te-doped GaSb/AlSb superlattices
    Ru, GP
    Li, AZ
    Zheng, YL
    Shen, WZ
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (01) : 29 - 33
  • [34] Dopant-related defect in Te-doped AlInP
    Wu, Yu-Rue
    Sung, Wei-Jer
    Wen, Tzu-Chi
    Lee, Shih-Chang
    Lee, Wei-I
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (08): : 4720 - 4721
  • [35] VAPOR-PHASE GROWTH OF TE-DOPED GASB
    KITAMURA, N
    KAKEHI, M
    SHEN, J
    WADA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 995 - 996
  • [36] Magnetoplastic Effect in Te-Doped GaAs Single Crystals
    T. G. Yugova
    A. G. Belov
    S. N. Knyazev
    Crystallography Reports, 2020, 65 : 7 - 11
  • [37] DOUBLE ACCEPTOR BEHAVIOR OF CU IN TE-DOPED GAAS
    ALLISON, HW
    FULLER, CS
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2519 - &
  • [38] Photothermal, photocarrier and Raman characterization of Te-doped GaSb
    Velazquez-Hernandez, R.
    Garcia-Rivera, J.
    Garcia, M. E. Rodriguez
    Sandoval, S. Jimenez
    Mendoza-Alvarez, J. G.
    Garcia, J. A.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
  • [39] Determination of carrier density in Te-doped Bi nanowires
    Lin, YM
    Dresselhaus, MS
    APPLIED PHYSICS LETTERS, 2003, 83 (17) : 3567 - 3569
  • [40] Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs
    Paquette, Bernard
    Ilahi, Bouraoui
    Aimez, Vincent
    Ares, Richard
    JOURNAL OF CRYSTAL GROWTH, 2013, 383 : 30 - 35
12345