POSSIBLE SOURCES OF ERROR IN DEDUCTION OF SEMICONDUCTOR IMPURITY CONCENTRATIONS FROM SCHOTTKY-BARRIER (C V) CHARACTERISTICS

被引:11
|
作者
SMITH, BL
RHODERIC.EH
机构
关键词
D O I
10.1088/0022-3727/2/3/423
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:465 / &
相关论文
共 50 条
  • [41] Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
    Rogdakis, Konstantinos
    Lee, Seoung-Yong
    Kim, Dong-Joo
    Lee, Sang-Kwon
    Bano, Edwige
    Zekentes, Konstantinos
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 235 - +
  • [42] Frequency dependent C-V and G/ω-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes
    Tan, S. O.
    Tecimer, H. Uslu
    Cicek, O.
    Tecimer, H.
    Altindal, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (06) : 4951 - 4957
  • [43] DETERMINATION OF QUASI-FERMI LEVEL WITHIN SCHOTTKY BARRIER FROM ITS I-V CHARACTERISTICS.
    Ge Weikun
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (06): : 658 - 660
  • [44] Barrier characteristics of PtSi/p-Si schottky diodes as determined from I-V-T measurements
    McCafferty, PG
    Sellai, A
    Dawson, P
    Elabd, H
    SOLID-STATE ELECTRONICS, 1996, 39 (04) : 583 - 592
  • [45] Au/Mn5Ge3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data
    Sellai, Azzouz
    Vinh Le Thanh
    Petit, Matthieu
    Michez, Lisa
    Ouennoughi, Zahir
    Mesli, Abdelmadjid
    2012 16TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (MELECON), 2012, : 179 - 182
  • [46] PARAMETER EXTRACTION FROM NONIDEAL C-V CHARACTERISTICS OF A SCHOTTKY DIODE WITH AND WITHOUT INTERFACIAL LAYER
    TURUT, A
    YALCIN, N
    SAGLAM, M
    SOLID-STATE ELECTRONICS, 1992, 35 (06) : 835 - 841
  • [47] Barrier characteristics of gold Schottky contacts on moderately doped n-InP based on temperature dependent I-V and C-V measurements
    Soylu, M.
    Abay, B.
    MICROELECTRONIC ENGINEERING, 2009, 86 (01) : 88 - 95
  • [48] The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes
    Nuhoglu, Ç
    Özerden, E
    Türüt, A
    APPLIED SURFACE SCIENCE, 2005, 250 (1-4) : 203 - 208
  • [49] Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes
    Y. Munikrishana Reddy
    M. K. Nagaraj
    M. Siva Pratap Reddy
    Jung-Hee Lee
    V. Rajagopal Reddy
    Brazilian Journal of Physics, 2013, 43 : 13 - 21
  • [50] Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements
    Reddy, N. Nanda Kumar
    Reddy, V. Rajagopal
    BULLETIN OF MATERIALS SCIENCE, 2012, 35 (01) : 53 - 61