共 50 条
- [41] Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 235 - +
- [43] DETERMINATION OF QUASI-FERMI LEVEL WITHIN SCHOTTKY BARRIER FROM ITS I-V CHARACTERISTICS. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (06): : 658 - 660
- [45] Au/Mn5Ge3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data 2012 16TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (MELECON), 2012, : 179 - 182
- [49] Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes Brazilian Journal of Physics, 2013, 43 : 13 - 21