EPITAXIAL-GROWTH OF GERMANIUM ON SILICON BY CHEMICAL VAPOR-DEPOSITION

被引：0
|
作者：
GREEN, ML [1 ]
ALI, YS [1 ]
BRASEN, D [1 ]
WILLENS, RH [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：A28 / A28
页数：1
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