HIGH-ELECTRIC-FIELD TRANSPORT EFFECTS ON LOW-TEMPERATURE OPERATION OF PSEUDOMORPHIC HEMTS

被引：5

作者：

ANIEL, F ^{[1
]}

CROZAT, P ^{[1
]}

DELUSTRAC, A ^{[1
]}

ADDE, R ^{[1
]}

JIN, Y ^{[1
]}

机构：

[1] CNRS, L2M, F-92220 BAGNEUX, FRANCE

来源：

JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C6期

关键词：

D O I：

10.1051/jp4:1994627

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High electric field effect in very small pseudomorphic High Electron Mobility Transistor (HEMT) Al0.22Ga0.78As/In0.2Ga0.8As/GaAs and their influence at low temperature are investigated for 0.1mum up to 0.4mum gate lengths. The extent of transport improvement at low temperature and performance degradation associated with gate length reduction are underlined. Limitations in performance improvement appear at low temperature due to trapping effects and to an enhancement of the mechanisms responsible of short channel effects. In pulsed drain operation the evolutions of drain current versus time in the 10ns-600mus range illustrate the influence of trapping centers and self heating of the lattice in the device. We analyze the variation of gate current versus temperature at high drain bias (>3V) and the influence of impact ionization.

引用

页码：171 / 176

页数：6

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