EPITAXIAL GROWTH OF GERMANIUM ON SILICON

被引：0
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作者：
OLDHAM, WG
RIBEN, AR
FEUCHT, DL
MILNES, AG
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 03期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C53 / C53
页数：1
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