ELECTRON-HOLE INTERACTION EFFECT ON THE SPECTRUM OF DIRECT INTERBAND-TRANSITIONS IN SILICON

被引：0

|

作者：

TOLPYGO, KB

SHATALOV, VM

机构：

来源：

FIZIKA TVERDOGO TELA | 1980年 / 22卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：2463 / 2467

页数：5

相关论文

共 50 条

[41] Electron-hole interactions in silicon nanocrystals
Leung, K
Whaley, KB
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 455 - PHYS
[42] Electron-hole drops in dislocational silicon
Drozdov, N
Fedotov, A
MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 392 - 399
[43] Electron-hole interactions in silicon nanocrystals
Leung, K.
Whaley, K. B.
Physical Review B: Condensed Matter, 56 (12):
[44] ELECTRON-HOLE DROPLETS IN GERMANIUM AND SILICON
ROTHENBE.MS
PHYSICS TODAY, 1973, 26 (12) : 17 - 19
[45] RADIUS OF ELECTRON-HOLE DROPS IN SILICON
VOISIN, P
ETIENNE, B
VOOS, M
SOLID STATE COMMUNICATIONS, 1980, 33 (05) : 541 - 544
[46] INSTABILITY OF THE ELECTRON-HOLE PLASMA IN SILICON
COMBESCOT, M
BOK, J
PHYSICAL REVIEW LETTERS, 1982, 48 (20) : 1413 - 1416
[47] Electron-hole drops in silicon with dislocations
Drozdov, N
Fedotov, A
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) : 12813 - 12818
[48] THE EFFECT OF ELECTRON-HOLE PLASMAS ON THE DENSITY OF STATES OF SILICON AND GAAS
LOWNEY, JR
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4279 - 4283
[49] DIRECT ELECTRON-HOLE RECOMBINATION IN ANTHRACENE
MORRIS, R
SILVER, M
JOURNAL OF CHEMICAL PHYSICS, 1969, 50 (07): : 2969 - &
[50] FAR-INFRARED ABSORPTION-SPECTRUM OF ELECTRON-HOLE DROPS IN SILICON
NAVARRO, H
ZARATE, HG
TIMUSK, T
SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1045 - 1048

← 1 2 3 4 5 →