NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE

被引：22
|
作者：
DEAN, PJ
FAULKNER, RA
机构：
来源：
APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期
关键词：
D O I：
10.1063/1.1652781
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：210 / &
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