NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE

被引：22
|
作者：
DEAN, PJ
FAULKNER, RA
机构：
来源：
APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期
关键词：
D O I：
10.1063/1.1652781
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：210 / &
相关论文
共 50 条
  • [1] LOW-LEVEL INTERBAND ABSORPTION IN PHOSPHORUS-RICH GALLIUM ARSENIDE-PHOSPHIDE
    DEAN, PJ
    KAMINSKY, G
    ZETTERST.RB
    PHYSICAL REVIEW, 1969, 181 (03): : 1149 - &
  • [2] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE
    FAULKNER, RA
    MERZ, JL
    DEAN, PJ
    SOLID STATE COMMUNICATIONS, 1969, 7 (11) : 831 - &
  • [3] ISOELECTRONIC TRAP ANTIMONY IN GALLIUM PHOSPHIDE
    DEAN, PJ
    CUTHBERT, JD
    FAULKNER, RA
    SCHONHER.E
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 395 - &
  • [4] LOCAL MODES OF VIBRATION OF ISOELECTRONIC IMPURITIES IN GALLIUM PHOSPHIDE AND GALLIUM ARSENIDE
    ALLEN, JW
    JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02): : L48 - &
  • [5] Diffusion of zinc in gallium phosphide under defect-free phosphorus-rich conditions
    Pöpping, J
    Stolwijk, NA
    Södervall, U
    Jäger, C
    Jäger, W
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 895 - 898
  • [6] NEW ISOELECTRONIC TRAP LUMINESCENCE IN GALLIUM-PHOSPHIDE
    DEAN, PJ
    THOMAS, DG
    FROSCH, CJ
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (04): : 747 - 762
  • [7] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
    THOMAS, DG
    HOPFIELD, JJ
    FROSCH, CJ
    PHYSICAL REVIEW LETTERS, 1965, 15 (22) : 857 - &
  • [8] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
    THOMAS, DG
    HOPFIELD, JJ
    PHYSICAL REVIEW, 1966, 150 (02): : 680 - &
  • [9] INTERIMPURITY RECOMBINATIONS INVOLVING ISOELECTRONIC TRAP BISMUTH IN GALLIUM PHOSPHIDE
    DEAN, PJ
    CUTHBERT, JD
    LYNCH, RT
    PHYSICAL REVIEW, 1969, 179 (03): : 754 - &
  • [10] Indium phosphide crystal growth from phosphorus-rich melt
    Sun, NF
    Mao, LH
    Zhou, XL
    Wu, XW
    Guo, WL
    Hu, M
    Li, LX
    Xiao, M
    Liao, B
    Yang, GY
    Fu, JD
    Ya, ZH
    Zhao, YJ
    Yang, KW
    Sun, TN
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 326 - 329
12345