共 50 条
- [41] ULTRAVIOLET PHOTOELECTRON SPECTROSCOPIC STUDIES OF VALENCE BAND STRUCTURES IN SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 629 - 632
- [44] THE DEFECT CHARACTERIZATION OF HEAVILY SI-DOPED MOLECULAR-BEAM EPITAXY-GROWN GAAS BY THE MONOENERGETIC POSITRON METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11A): : 2863 - 2867
- [46] Si-doped Ga1-xInxSb grown by molecular beam epitaxy COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 283 - 286
- [47] CHARACTERISTICS OF HEAVILY SI-DOPED GAAS GROWN ON (111)A ORIENTED SUBSTRATE BY MOLECULAR-BEAM EPITAXY AS COMPARED WITH (100) GROWTH JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02): : L151 - L154
- [48] ELECTRICAL-PROPERTIES OF HEAVILY SI-DOPED GAAS GROWN ON (311)A GAAS-SURFACES BY MOLECULAR-BEAM EPITAXY GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 547 - 552