TITANIUM ISOPROPOXIDE AS A PRECURSOR IN ATOMIC LAYER EPITAXY OF TITANIUM-DIOXIDE THIN-FILMS

被引：268
|
作者：
RITALA, M
LESKELA, M
NIINISTO, L
HAUSSALO, P
机构：
[1] HELSINKI UNIV TECHNOL,INORGAN & ANALYT CHEM LAB,SF-02150 ESPOO,FINLAND
[2] UNIV HELSINKI,ACCELERATOR LAB,SF-00014 HELSINKI,FINLAND
来源：
CHEMISTRY OF MATERIALS | 1993年 / 5卷 / 08期
关键词：
D O I：
10.1021/cm00032a023
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Atomic layer epitaxy (ALE) deposition of titanium dioxide thin films using titanium isopropoxide and water as precursors was studied. The deposition temperature was limited to below 350-degrees-C by the thermal decomposition of the alkoxide. Films were studied by means of spectrophotometry, XRD, RBS, NRA, SEM, and AFM. A comparison with the ALE process using titanium tetrachloride as a titanium precursor is being carried out.
引用
收藏
页码：1174 / 1181
页数：8
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