MODEL PSEUDOPOTENTIAL FOR ELEMENTARY SEMICONDUCTORS

被引：10
|
作者：
MASOVIC, DR [1 ]
ZEKOVIC, S [1 ]
机构：
[1] BORIS KIDRIC INST NUCL SCI, THEORET PHYS LAB, YU-11001 BELGRADE, YUGOSLAVIA
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1979年 / 96卷 / 01期
关键词：
D O I：
10.1002/pssb.2220960151
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：469 / 474
页数：6
相关论文
共 50 条
  • [41] Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation
    Artur Medvid
    Pavels Onufrijevs
    Gatis Mozolevskis
    Edvins Dauksta
    Roberts Rimsa
    Nanoscale Research Letters, 7
  • [42] PSEUDOPOTENTIAL HARTREE-FOCK STUDY OF 17 III-V-SEMICONDUCTORS AND IV-IV-SEMICONDUCTORS
    CAUSA, M
    DOVESI, R
    ROETTI, C
    PHYSICAL REVIEW B, 1991, 43 (14): : 11937 - 11943
  • [43] EXCITATION EFFECT OF DISLOCATION MOBILITY IN ELEMENTARY SEMICONDUCTORS
    MAEDA, N
    KIMURA, K
    TAKEUCHI, S
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1987, 51 (04): : 729 - 734
  • [44] TOWARD THE THEORY OF ELEMENTARY EXCITATIONS IN ATOMIC SEMICONDUCTORS
    SAMOILOVICH, AG
    KOROLYUK, SL
    SOVIET PHYSICS-SOLID STATE, 1960, 1 (10): : 1454 - 1460
  • [45] Elementary steps in electrical doping of organic semiconductors
    Max L. Tietze
    Johannes Benduhn
    Paul Pahner
    Bernhard Nell
    Martin Schwarze
    Hans Kleemann
    Markus Krammer
    Karin Zojer
    Koen Vandewal
    Karl Leo
    Nature Communications, 9
  • [46] Elementary steps in electrical doping of organic semiconductors
    Tietze, Max L.
    Benduhn, Johannes
    Pahner, Paul
    Nell, Bernhard
    Schwarze, Martin
    Kleemann, Hans
    Krammer, Markus
    Zojer, Karin
    Vandewal, Koen
    Leo, Karl
    NATURE COMMUNICATIONS, 2018, 9
  • [47] Empirical pseudopotential calculation of band structure and deformation potentials of biaxially strained semiconductors
    Kim, Jiseok
    Fischetti, Massimo V.
    IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS, 2009, : 149 - 152
  • [48] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
    CHELIKOWSKY, JR
    COHEN, ML
    PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
  • [49] SEMI-EMPIRICAL PSEUDOPOTENTIAL CALCULATIONS FOR THE ELECTRONIC-STRUCTURE OF ZINCBLENDE SEMICONDUCTORS
    SINGH, I
    SRIVASTAVA, GP
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 108 (02): : 467 - 473
  • [50] ABINITIO PSEUDOPOTENTIAL CALCULATIONS OF OPTICAL-PHONON DEFORMATION POTENTIALS IN ZINCBLENDE SEMICONDUCTORS
    WANG, BS
    GU, ZQ
    WANG, JQ
    LI, MF
    PHYSICAL REVIEW B, 1989, 39 (17): : 12789 - 12793
12345