INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD

被引：27
|
作者：
HIRAO, T [1 ]
SETSUNE, K [1 ]
KITAGAWA, M [1 ]
KAMADA, T [1 ]
WASA, K [1 ]
IZUMI, T [1 ]
机构：
[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA 25912,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期
关键词：
D O I：
10.1143/JJAP.26.2015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2015 / 2021
页数：7
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