DIRECT DETERMINATION OF THE VALENCE-BAND OFFSETS AT GA0.47IN0.53AS/INP AND INP/GA0.47IN0.53AS HETEROSTRUCTURES BY ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY

被引：17
|
作者：
LANDESMAN, JP
GARCIA, JC
MASSIES, J
MAUREL, P
JEZEQUEL, G
HIRTZ, JP
ALNOT, P
机构：
[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE
[2] UNIV RENNES 1,SPECT SOLIDE LAB,F-35042 RENNES,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 10期
关键词：
D O I：
10.1063/1.107418
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultraviolet photoemission spectroscopy has been used to study the valence-band offsets at GaInAs/InP and InP/GaInAs heterostructures grown by metalorganic molecular-beam epitaxy. High-resolution In-4d/Ga-3d core levels were used. The measured values are 440 +/- 50 meV for the "direct" (GaInAs grown on InP) interface and 260 +/- 50 meV for the "inverse" interface. This band-offset asymmetry is attributed to a difference in the chemical natures of the two interfaces, deduced from the detailed analysis of the core-level spectra.
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页码：1241 / 1243
页数：3
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