共 50 条
- [31] DIFFERENTIAL CAPACITANCE OF AN N-N HETEROJUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1538 - &
- [33] LOW-TEMPERATURE ELECTRON-TRANSPORT IN N-TYPE SI AND GAAS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 459 - 459
- [34] On the boundary conditions for electron transport across an abrupt Np-heterojunction HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 289 - 292
- [35] PHOTOVOLTAIC RESPONSE OF GaAs-AlxGa1 - xAs n-N HETEROJUNCTION. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1982, 3 (06): : 465 - 473
- [36] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &