NEW PIN MOSFET STRUCTURE FOR HOT-CARRIER SUPPRESSION

被引：1

作者：

MANNA, I

JUNG, L

BHATTACHARYA, S

BANERJEE, S

机构：

[1] Microelectronics Research Center, University of Texas, Austin

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 05期

关键词：

MOSFETS; HOT CARRIERS;

D O I：

10.1049/el:19940275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As an alternative to lightly doped drain (LDD) structures, a new pin MOSFET structure has been developed with near-intrinsic doping in the channel near the source/drain ends. This new structure has better hot carrier suppression, current drive capability and short channel effects compared to LDD MOSFETs.

引用

页码：457 / 459

页数：3

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