NEW PIN MOSFET STRUCTURE FOR HOT-CARRIER SUPPRESSION

被引：1
|
作者：
MANNA, I
JUNG, L
BHATTACHARYA, S
BANERJEE, S
机构：
[1] Microelectronics Research Center, University of Texas, Austin
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 05期
关键词：
MOSFETS; HOT CARRIERS;
D O I：
10.1049/el:19940275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As an alternative to lightly doped drain (LDD) structures, a new pin MOSFET structure has been developed with near-intrinsic doping in the channel near the source/drain ends. This new structure has better hot carrier suppression, current drive capability and short channel effects compared to LDD MOSFETs.
引用
收藏
页码：457 / 459
页数：3
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