THE IMPACT OF SCALING-DOWN OXIDE THICKNESS ON POLY-SI THIN-FILM TRANSISTORS IV CHARACTERISTICS

被引：12
|
作者：
LIN, PS
LI, TS
机构：
[1] Subrnicron Technology Division, Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 04期
关键词：
7;
D O I：
10.1109/55.285404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The key factors reducing the fluctuations of poly-Si I-V fluctuations are investigated. Besides the trapping states at the grain boundary, the oxide thickness plays an important role on poly-Si characteristics. Scaling down the oxide thickness will improve both poly-Si performance and I-V uniformnity.
引用
收藏
页码：138 / 139
页数：2
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