THE EFFECT OF THERMAL ANNEALING ON THE ADHERENCE OF AL2O3-FILMS DEPOSITED BY LOW-PRESSURE, METAL-ORGANIC, CHEMICAL-VAPOR-DEPOSITION ON AISI-304

被引:6
|
作者
HAANAPPEL, VAC
VANDERVENDEL, D
VANCORBACH, HD
FRANSEN, T
GELLINGS, PJ
机构
[1] Department of Chemical Technology, University of Twente, Enschede
来源
OXIDATION OF METALS | 1995年 / 43卷 / 5-6期
关键词
METAL-ORGANIC; CHEMICAL-VAPOR DEPOSITION (MOCVD); THERMAL ANNEALING; ALUMINA FILMS; SCANNING SCRATCH TEST (SST); ADHERENCE;
D O I
10.1007/BF01046893
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Thin alumina films, deposited at 280 degrees C by low-pressure, metal-organic, chemical-vapor deposition on stainless steel, type AISI 304, were annealed at 0.17 kPa in a nitrogen atmosphere for 2, 4, and 17 hr at 600, 700, and 800 degrees C. The effect of the annealing process on the adhesion of the thin alumina films was studied using a scanning-scratch tester, type SST-101, developed by Shimadzu. The best mechanical properties were obtained with unannealed samples. After thermal annealing the critical load decreased proportional to annealing time and/or temperature. This effect was probably due to the presence of a high thermal stress and to preferential segregation of sulfur near the oxide-alloy interface.
引用
收藏
页码:459 / 478
页数:20
相关论文
共 50 条
  • [31] Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3by metal-organic chemical vapor deposition
    Yang, XT
    Du, GT
    Wang, XQ
    Wang, JZ
    Liu, BY
    Zhang, YT
    Liu, D
    Liu, DL
    Ong, HC
    Yang, SR
    JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 275 - 278
  • [32] STRESS IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION POLYCRYSTALLINE SILICON THIN-FILMS DEPOSITED BELOW 0.1 TORR
    BENITEZ, A
    BAUSELLS, J
    CABRUJA, E
    ESTEVE, J
    SAMITIER, J
    SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 : 723 - 726
  • [33] CHARACTERIZATION OF HIGH-QUALITY INGAP/GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    CALDIRONI, M
    VITALI, L
    DELLAGIOVANNA, M
    DIPAOLA, A
    VIDIMARI, F
    PELLEGRINO, S
    FERRARI, C
    FRANZOSI, P
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 158 - 163
  • [34] DEEP-LEVEL CHARACTERIZATION OF ALXIN1-XAS LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    BEARZI, E
    DUCROQUET, F
    GUILLOT, G
    TARDY, J
    CANEAU, C
    CHAN, W
    BHAT, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 421 - 424
  • [35] Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition
    Hock Key Moon
    Jaehong Yoon
    Hyungjun Kim
    Nae-Eung Lee
    Metals and Materials International, 2013, 19 : 611 - 616
  • [36] REVERSE ANNEALING OF ARSENIC-IMPLANTED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION (LPCVD) AMORPHOUS-SILICON FILMS
    TSAI, MJ
    WANG, FS
    CHENG, HC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (9A): : L1254 - L1256
  • [37] Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition
    Moon, Hock Key
    Yoon, Jaehong
    Kim, Hyungjun
    Lee, Nae-Eung
    METALS AND MATERIALS INTERNATIONAL, 2013, 19 (03) : 611 - 616
  • [38] Effect of rapid thermal annealing on the properties of Pb(Zr, Ti)O3 thin films made by low-temperature metal-organic chemical vapor deposition
    Lee, CH
    Kim, SI
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (11B): : 6701 - 6704
  • [39] LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE FILMS BY THERMAL-DECOMPOSITION OF TETRA-ALKOXYSILANES
    KIM, EJ
    GILL, WN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (02) : 676 - 682
  • [40] RECRYSTALLIZATION BY RAPID THERMAL ANNEALING OF IMPLANTED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS SI FILMS
    ALVI, NS
    TANG, SM
    KWOR, R
    FULCHER, MR
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4878 - 4883