THE EFFECT OF THERMAL ANNEALING ON THE ADHERENCE OF AL2O3-FILMS DEPOSITED BY LOW-PRESSURE, METAL-ORGANIC, CHEMICAL-VAPOR-DEPOSITION ON AISI-304

被引:6
|
作者
HAANAPPEL, VAC
VANDERVENDEL, D
VANCORBACH, HD
FRANSEN, T
GELLINGS, PJ
机构
[1] Department of Chemical Technology, University of Twente, Enschede
来源
OXIDATION OF METALS | 1995年 / 43卷 / 5-6期
关键词
METAL-ORGANIC; CHEMICAL-VAPOR DEPOSITION (MOCVD); THERMAL ANNEALING; ALUMINA FILMS; SCANNING SCRATCH TEST (SST); ADHERENCE;
D O I
10.1007/BF01046893
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Thin alumina films, deposited at 280 degrees C by low-pressure, metal-organic, chemical-vapor deposition on stainless steel, type AISI 304, were annealed at 0.17 kPa in a nitrogen atmosphere for 2, 4, and 17 hr at 600, 700, and 800 degrees C. The effect of the annealing process on the adhesion of the thin alumina films was studied using a scanning-scratch tester, type SST-101, developed by Shimadzu. The best mechanical properties were obtained with unannealed samples. After thermal annealing the critical load decreased proportional to annealing time and/or temperature. This effect was probably due to the presence of a high thermal stress and to preferential segregation of sulfur near the oxide-alloy interface.
引用
收藏
页码:459 / 478
页数:20
相关论文
共 50 条
  • [1] THE EFFECT OF THERMAL ANNEALING ON THE PROPERTIES OF THIN ALUMINA FILMS PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    HAANAPPEL, VAC
    VANDERVENDEL, D
    VANCORBACH, HD
    FRANSEN, T
    GELLINGS, PJ
    THIN SOLID FILMS, 1995, 256 (1-2) : 8 - 12
  • [2] PROPERTIES OF ALUMINA FILMS PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    HAANAPPEL, VAC
    VANCORBACH, HD
    FRANSEN, T
    GELLINGS, PJ
    SURFACE & COATINGS TECHNOLOGY, 1995, 72 (1-2): : 13 - 22
  • [3] AL2O3 COATINGS AGAINST HIGH-TEMPERATURE CORROSION DEPOSITED BY METAL-ORGANIC LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
    VANCORBACH, HD
    HAANAPPEL, VAC
    FRANSEN, T
    GELLINGS, PJ
    THIN SOLID FILMS, 1994, 239 (01) : 31 - 36
  • [4] METAL-ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF AL
    GREEN, ML
    LEVY, RA
    NUZZO, RG
    COLEMAN, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C101 - C101
  • [5] THE EFFECT OF THERMAL ANNEALING ON THE PROPERTIES OF ALUMINA FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE
    HAANAPPEL, VAC
    VANCORBACH, HD
    FRANSEN, T
    GELLINGS, PJ
    SURFACE & COATINGS TECHNOLOGY, 1994, 64 (03): : 183 - 193
  • [6] DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    WU, CC
    LIN, KC
    CHAN, SH
    FENG, MS
    CHANG, CY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 19 (03): : 234 - 239
  • [7] Aluminum silicate films obtained by low-pressure metal-organic chemical vapor deposition
    Kuo, DH
    Chuang, PY
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2003, 86 (06) : 969 - 974
  • [8] RUO2 FILMS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    SI, J
    DESU, SB
    JOURNAL OF MATERIALS RESEARCH, 1993, 8 (10) : 2644 - 2648
  • [9] CHARACTERIZATION OF INTLSB/INSB GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON A GAAS SUBSTRATE
    CHOI, YH
    STAVETEIG, PT
    BIGAN, E
    RAZEGHI, M
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 3196 - 3198
  • [10] Thermal annealing of InN films grown by metal-organic chemical vapor deposition
    Bi, ZX
    Zhang, R
    Xie, ZL
    Xiu, XQ
    Ye, YD
    Liu, B
    Gu, SL
    Shen, B
    Shi, Y
    Zheng, YD
    THIN SOLID FILMS, 2005, 488 (1-2) : 111 - 115