SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR TUNNELING IN BA1-XKXBIO3 GRAIN-BOUNDARIES

被引：31

作者：

KUSSMAUL, A ^{[1
]}

HELLMAN, ES ^{[1
]}

HARTFORD, EH ^{[1
]}

TEDROW, PM ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 20期

关键词：

D O I：

10.1063/1.110299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have prepared single grain boundaries of the superconductor Ba1-xKxBiO3 by growing epitaxial thin films of this compound on SrTiO3 bicrystal substrates. The four-terminal current-voltage characteristics of the grain boundaries showed clear superconductor-insulator-superconductor (SIS) tunneling behavior. The leakage at zero bias was smaller than 0.3% at 4.2 K. The differential conductance displayed sharp symmetric peaks at 2 Delta close to 6.5 mV. At higher bias, an increase in conductance proportional to V-2 was observed. The temperature dependence of the conductance was found to be in qualitative accord with conventional SIS theory.

引用

页码：2824 / 2826

页数：3

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