STEADY-STATE TEMPERATURE PROFILE FOR A THIN-FILM RESISTOR UNDER BIAS - RESPONSE

被引：0
|
作者：
SABETI, R
CHARLSON, EM
CHARLSON, EJ
机构：
[1] Department of Electrical and Computer Engineering, University of Missouri-Columbia, Columbia
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 08期
关键词：
D O I：
10.1063/1.354251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Although the thermal conductivities of silicon and silicon dioxide do vary with temperature, minimal change would result from a temperature rise of 50-degrees-C, from room temperature to 350-degrees-C. as is the case in the application in question.
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页码：5291 / 5291
页数：1
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