共 50 条
- [1] EFFECT OF THE ANNEALING AMBIENT ON THE REDISTRIBUTION OF BORON IMPLANTED INTO SILICON SOVIET MICROELECTRONICS, 1988, 17 (03): : 144 - 148
- [4] Redistribution of implanted impurities in dual As+ and B+ implanted silicon during annealing Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1997, 127-128 : 74 - 77
- [5] Redistribution of implanted impurities in dual As+ and B+ implanted silicon during annealing NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 74 - 77