STUDY OF THE CARRIER DENSITY-DEPENDENCE OF THE FRICTIONAL DRAG BETWEEN CLOSELY SPACED 2-DIMENSIONAL ELECTRON GASES

被引:35
|
作者
RUBEL, H
LINFIELD, EH
RITCHIE, DA
BROWN, KM
PEPPER, M
JONES, GAC
机构
[1] Cavendish Lab., Cambridge Univ.
关键词
D O I
10.1088/0268-1242/10/9/004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied electron transport in two closely spaced, but electrically isolated, two-dimensional electron gases (2DEGs) formed in GaAs/AlGaAs double quantum wells. A frictional drag voltage is found to be induced in one layer when a current is passed through the other. This voltage represents a direct measure of the interlayer electron-electron interactions, since it is determined by the momentum transfer due to scattering events between electrons in the different layers. We present new experimental data, based on a detailed carrier density dependence of these electron-electron interactions. Our results strongly support a recent theory proposing an interaction via virtual acoustic phonons. We have shown, in particular, that the 'phonon part' of the interlayer scattering rate is a function of the relative electron densities in the layers, with a maximum scattering rate when the densities are matched.
引用
收藏
页码:1229 / 1232
页数:4
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