PROLONGED AND RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON

被引：16
|
作者：
PETER, CR [1 ]
DESOUZA, JP [1 ]
HASENACK, CM [1 ]
机构：
[1] UNIV FED RIO GRANDE SUL, INST FIS, BR-90049 PORTO ALEGRE, RS, BRAZIL
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期
关键词：
D O I：
10.1063/1.341610
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2696 / 2699
页数：4
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